可持续发展Patent of Chamfering monocrystalline silicon with asymmetric edge in 23 Jun. 2009Patent Number : ZL 2009 2 0093957.X
Patent of Manufacturing polished wafer in diffused unilaterally in 8 Apr. 2009Patent Number ：ZL2007 1 005527 5.5
Patent of One kind VDMOS、IGBT power device in 6 Feb. 2008Patent Number : ZL 2007 2 0067356.2
Patent of VDMOS power device with PSG doping technology in 6 Feb. 2008Patent Number ：CN 200720067355
JSMC was confirmed as the enterprise those start to cultivate postdoctorals by Office of National Postdoctoral Management Committee in Jul. 2006.
Patent of semiconductor device fully encapsulated mold with PIN retractable by means of the molding compound pressure in 29 Sep. 2010Patent Number : Z…
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